Pathfinding Beyond 10nm An alarming number of disruptive new technologies are under development.
Sourced through Scoop.it from: semiengineering.com
Problem: Significantly Higher Costs Expected in Semiconductor Manufacturing.
Current State: “Equipment makers are spending only about 10% of revenues on R&D in recent years, noted Intermolecular scientific advisor Raj Jammy. “We’ll need some revolutionary lower cost approaches to enable future nodes.”
Cause: After higher aspect-ratio finFETs and higher mobility SiGe and III-V materials, the industry will move to lateral nanowires and then to vertical nanowire transistors, and to new tunnel junction FETs or spin wave architectures ─ or to various combinations of these technologies for different applications, reported An Steegan, Imec senior vice president of process technology, during SEMICON West 2015. Intermolecular scientific advisor Raj Jammy outlined a similar roadmap. “Scaling these finFETs and nanowires will require high aspect-ratio structures and selective deposition,” said Jammy, noting those slower processes will also likely mean higher costs.
Solution: The path forward is going be doing something different than the way that engineering and technology development and R&D has been done in the past. Cost is now the driver, a better way is required.